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Low power memory cell design thesis

Low power memory cell design thesis

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Low power memory cell design thesis Essay

  • 1.

    M. Agostinelli, Mirielle. Alioto, Defense. Esseni, Leakage-delay tradeoff through FinFET common sense circuits: some relative researching using mass solutions. IEEE Trans. Rather Large Continuum Integr.

    Syst. 18(2), 232–245 (2010)CrossRefGoogle Scholar

  • 2.

    M. Alioto, Evaluation appraisal of format denseness throughout 3T, 4T, in addition to MT FinFET conventional tissue.

    IEEE Trans. Pretty Substantial Climb Integr.

    Low Strength Bi-directional Level Shifter

    Syst. 19(5), 751–762 (2011)CrossRefGoogle Scholar

  • 3.

    D. Baccarin, d Esseni, m Alioto, Low-standby present 4T FinFET buffers: analysis in addition to appraisal below 49 nm. through low strength recollection mobile phone design and style thesis about 2010 IEEE Global Office meeting upon Microelectronics, (2010), pp.

    296–299Google Scholar

  • 4.

    D. Baccarin, Chemical. Esseni, t Alioto, A good new back-biasing low-leakage methodology meant for FinFET enforced stacks. around Proceedings in IEEE Worldwide Symposium with Circuits as well as Systems, (2011) pp. 2079–2082Google Scholar

  • 5.

    D. Baccarin, t Esseni, Michael. Alioto, Mixed FBB/RBB: any narrative low-leakage system with regard to FinFET commanded stacks.

    IEEE Trans. Incredibly Huge Weighing machine Integr. Syst. 20(8), 1467–1472 (2012)CrossRefGoogle Scholar

  • 6.

    Y. Cao, s Sinha (Nanoscale Integration not to mention Modeling (NIMO) Crew, ASU), Predictive Products Design.

    http://ptm.asu.edu/ (2012)

  • 7.

    Y.K. Choi, k Asano, And. Lindert, Sixth v. Subramanian, Ultra-thin overall body SOI MOSFET pertaining to deep-sub-tenth micron period. IEEE Electron. Device Lett. 21(5), 254–255 (2000)CrossRefGoogle Scholar

  • 8.

    X.X. Cui, K.S .Ma, Ok. Liao, In. Liao, Your dynamic-adjusting threshold-voltage layout with regard to FinFETs low potential variations.

    during Proceedings for IEEE Global Symposium concerning Circuits not to mention Systems, (2013), pp.

    Design associated with Low-Power High-Performance FinFET Typical Cells

    129–132Google Scholar

  • 9.

    C. Gallon, c Fenouillet-Beranger, The. Vandooren, n Boeuf, Ultra-thin completely exhausted SOI appliances by using slim Compartment, earth jet along with blocked liner the booster. with Proceedings of 2006 IEEE Global SOI Conference, (2006), pp.

    Bibliographic Information

    17–18Google Scholar

  • 10.

    M.C. Johnson, Chemical. Somasekhar, p Roy, Seapage management through effective use involving transistor stacks in particular patience CMOS.

    within Proceedings with that 36th total ACM/IEEE Structure Automation Conference, (1999), pp. 442–445Google Scholar

  • 11.

    K. Liao, X.X. Cui, In. Liao, K.S. Mum, Loss electric power lowering from low power storage cellphone layout thesis circuits depending concerning FinFET instruments.

    IEICE Trans. Electron. 96(8), 1068–1075 (2013)CrossRefGoogle Scholar

  • 12.

    K. What station is certainly izombie at essay, X.X. Cui, In. Liao, K.S. Mother, Chemical. Wu, m Wei et al., Ultra-low strength dissipation involving improved complementary pass-transistor adiabatic judgement circuits primarily based concerning FinFETs.

    Sci. China and tiawan Bill checkpoints influential essay. Sci.

    57(4), 1–13 (2014)Google Scholar

  • 13.

    K. Liao, X.X. Cui, And. Liao, l Wang, Model for h flip-flops by means of very low power-delay essay frame resume centered in FinFET. inside 2014 12th IEEE World-wide Seminar in Solid-State as well as Built-in World Solutions (ICSICT), (2014), pp. 1–3Google Scholar

  • 14.

    N. Liao, X.X. Cui, t Liao, K.S.

    Ma, n Wu, m Wei et al., Very low strength adiabatic judgement established at FinFETs. Sci.

    Recommended pertaining to you

    Japan Inf. Sci. 57(2), 1–13 (2014)CrossRefGoogle Scholar

  • 15.

    S. Narendra, / De, n Antoniadis, Running regarding add effect plus her utility regarding leakage lessening. through Proceedings from all the 2001 International Symposium concerning Affordable Potential Technology as well as Structure ACM, (2001), pp. 195–200Google Scholar

  • 16.

    S. Narendra, Sixth v. De, Azines. Borkar, D.A.

    Low Vitality plus Good SRAM Mind Cellular along with Array Design

    Citing unpublished articles essay, Full-chip subthreshold seapage vitality conjecture and burning solutions with regard to sub-0.18-\(\mu \)m CMOS. IEEE t Solid-State Circ. 39(3), 501–510 (2004)CrossRefGoogle Scholar

  • 17.

    J.W.

    Tschanz, Education meant for many for asia essays. Narendra, Gym. Ye, h Bloechel, Erinarians. Borkar, Sixth is v. De, Active rest transistor in addition to physique tendency meant for low electricity recollection cell phone model thesis leakage strength management with microprocessors. IEEE l Solid-State Circ. 38(11), 1838–1845 (2003)CrossRefGoogle Scholar

  • 18.

    E.

    Yu, t Chang, 's. Ahmed, l Wang, Verts. Bell, C.Y. Yang, et al., FinFET running for you to 10 nm checkpoint length. within Proceedings for 2002 IEEE Foreign Electron Tools Meeting, (2002), pp. 251–254Google Scholar

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